Date:
Thu, 11/01/201812:00-13:30
Location:
Danciger B building, Seminar room
Lecturer: Prof. G. Minkov
M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, Russia
Abstract:
I plan to make a short review of the features of the energy spectrum of carriers in the quantum wells of a gapless semiconductor HgTe, in which, depending on the thickness of the well, the "normal", inverted and semimetallic spectra are realized. I will review the edge, topologically protected states, that should arise in structures with an inverted spectrum (which is realized at a quantum well thickness greater than d_c = 6.3 nm.
In more detail, I will discuss the current state of experimental results on the study of the energy spectrum, the role of edge states in kinetic effects.
more details
M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, Russia
Abstract:
I plan to make a short review of the features of the energy spectrum of carriers in the quantum wells of a gapless semiconductor HgTe, in which, depending on the thickness of the well, the "normal", inverted and semimetallic spectra are realized. I will review the edge, topologically protected states, that should arise in structures with an inverted spectrum (which is realized at a quantum well thickness greater than d_c = 6.3 nm.
In more detail, I will discuss the current state of experimental results on the study of the energy spectrum, the role of edge states in kinetic effects.
more details